5N120BND DATASHEET PDF

5NBND. HGT1S5NBNDS. TOAB. 5NBND. NOTE: When ordering , use the entire part number. Add the suffix 9A to obtain the TOAB variant in. 5NBND Datasheet: 21A, V, NPT Series N-Channel IGBTs with Anti- Parallel Hyperfast Diodes, 5NBND PDF Download Fairchild Semiconductor, . mosfet 5Nbnd datasheet, cross reference, circuit and application notes in pdf format.

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G5N120BND Datasheet PDF

Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Other typical frequency vs collector current ICE plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and Specifications may change in any manner without notice. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.

Life support devices or systems are devices or support device or system whose failure to perform can systems which, a are 5n120bnc for surgical implant into be reasonably expected to cause the failure of the life the body, or b support or sustain 5n120gnd, or c whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness.

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This is a stress only rating and operation of the device at these 5nn120bnd any other conditions above those indicated in the operational sections of this specification is not implied. Gate Protection – These devices do daasheet have an internal monolithic Zener diode from gate to emitter. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. If gate protection is required an external Zener is recommended.

5NBND Datasheet PDF – Fairchild Semiconductor

The IGBT is ideal for many high voltage adtasheet applications operating at moderate frequencies where low conduction losses are essential, such as: Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.

When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.

Operating frequency information for a typical device Figure xatasheet is presented as a guide for estimating device performance for a specific application. The datasheet is printed for reference information only. Other definitions are possible. Circuits that leave the gate opencircuited or floating should be avoided.

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A critical component is any component of a life 1.

All tail losses are included in the calculation for EOFF ; i. Device turn-off delay can establish an additional frequency limiting condition for dstasheet application other than TJM.

5NBND Datasheet, PDF – Datasheet Search Engine

The sum of device switching and conduction losses must not exceed PD. Gate Termination – The gates of these devices are 5n120nd capacitors. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This test method produces the true total Turn-Off Energy Loss.

IGBTs can be handled safely if the following basic precautions are taken: Devices should never be inserted into or removed from circuits with power on. Tips of soldering irons should be grounded. When ordering, use the entire part number.

Pulse width limited by maximum junction temperature. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.